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NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	6V
Current - Collector Cutoff:	5uA
DC Current Gain:	100@1A,5V
Transition frequency(fT):	10MHz
type:	NPN
Vce Saturation(VCE(sat)):	1V
Pd - Power Dissipation:	2W
Current - Collector(Ic):	7A
Collector - Emitter Voltage VCEO:	200V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor NPN 200V 7A 10MHz 2W Through Hole TO-220-3L
Mfr. Part #:	BU406
Model Number:	BU406
Package:	TO-220-3L

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NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications

Product Overview

The BU406 is a high-voltage, fast-switching NPN power transistor designed for various applications. It features a low saturation voltage, enabling efficient operation. Pb-free packages are available, contributing to environmental considerations. This transistor is suitable for applications requiring high voltage handling and rapid switching capabilities.

Product Attributes

Brand: SLKORMICRO (implied by website URL)
Model: BU406
Package Type: TO-220-3L
Material: Pb-Free Packages Available

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	400			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=100mA,IB=0	200			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100uA,IC=0			6	V
Collector cut-off current	ICES	VCB=400V,IE=0			5	mA
Collector cut-off current	ICES	VCB=250V,IE=0			1	mA
Collector cut-off current	ICBO	VCB=300V,IE=0			5	A
Emitter cut-off current	IEBO	VEB=6V,IC=0			1	mA
DC current gain	hFE	VCE=5V, IC=1A	50	100
Collector-emitter saturation voltage	VCE(sat)	IC=5A,IB=500mA			1	V
Base-emitter saturation voltage	VBE(sat)	IC=5A,IB=500mA			1.2	V
Collector output capacitance	Cob	VCB=10V,IE=0, f=1MHz			80	pF
Transition frequency	fT	VCE=5V,IC=0.2A,f=10MHz		10		MHz
Collector-Base Voltage	VCBO				400	V
Collector-Emitter Voltage	VCEO				200	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				7	A
Collector Power Dissipation	PC				2	W
Thermal Resistance from Junction to Ambient	RJA				62.5	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	4.470 - 4.670	0.176 - 0.184
A1	2.520 - 2.820	0.099 - 0.111
b	0.710 - 0.910	0.028 - 0.036
b1	1.170 - 1.370	0.046 - 0.054
c	0.310 - 0.530	0.012 - 0.021
c1	1.170 - 1.370	0.046 - 0.054
D	10.010 - 10.310	0.394 - 0.406
E	8.500 - 8.900	0.335 - 0.350
E1	12.060 - 12.460	0.475 - 0.491
e
e1	4.980 - 5.180	0.196 - 0.204
F	2.590 - 2.890	0.102 - 0.114
h	0.000 - 0.300	0.000 - 0.012
L	13.400 - 13.800	0.528 - 0.543
L1	3.560 - 3.960	0.140 - 0.156
	3.735 - 3.935	0.147 - 0.155
	2.540 TYP	0.100 TYP

2209051730_Slkor-BU406_C5155411.pdf

NPN power transistor Slkor BU406 optimized for high voltage handling and rapid switching applications

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