Sign In | Join Free | My ecer.com.ru
ecer.com.ru
Products
Search by Category
Home >

MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

Categories EMMC Memory Chip
Brand Name: original
Model Number: MT41K128M16JT-125 AAT:K
Certification: original
Place of Origin: original
MOQ: 1
Price: negotiation
Payment Terms: T/T
Supply Ability: 100,000
Delivery Time: 1-3working days
Packaging Details: carton box
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Organization: 128M x 16
Memory Interface: Parallel
Clock Frequency: 800 MHz
Access Time: 13.75 ns
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
  • Submit Buying Request
    • Product Details
    • Company Profile

    MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

    MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

    Specifications of MT41K128M16JT-125 AAT:K


    TYPEDESCRIPTION
    CategoryIntegrated Circuits (ICs)
    Memory
    Memory
    MfrMicron Technology Inc.
    SeriesAutomotive, AEC-Q100
    PackageTray
    Memory TypeVolatile
    Memory FormatDRAM
    TechnologySDRAM - DDR3L
    Memory Size2Gbit
    Memory Organization128M x 16
    Memory InterfaceParallel
    Clock Frequency800 MHz
    Write Cycle Time - Word, Page-
    Access Time13.75 ns
    Voltage - Supply1.283V ~ 1.45V
    Operating Temperature-40°C ~ 105°C (TC)
    Mounting TypeSurface Mount
    Package / Case96-TFBGA
    Supplier Device Package96-FBGA (8x14)
    Base Product NumberMT41K128M16


    Features of MT41K128M16JT-125 AAT:K


    • VDD = VDDQ = 1.35V (1.283–1.45V)
    • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
    • Differential bidirectional data strobe
    • 8n-bit prefetch architecture
    • Differential clock inputs (CK, CK#)
    • 8 internal banks
    • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
    • Programmable CAS (READ) latency (CL)
    • Programmable posted CAS additive latency (AL)
    • Programmable CAS (WRITE) latency (CWL)
    • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
    • Selectable BC4 or BL8 on-the-fly (OTF)
    • Self refresh mode
    • Refresh maximum interval time at TC temperature range
    – 64ms at –40°C to +85°C
    – 32ms at +85°C to +105°C
    – 16ms at +105°C to +115°C
    – 8ms at +115°C to +125°C
    • Self refresh temperature (SRT)
    • Automatic self refresh (ASR)
    • Write leveling
    • Multipurpose register



    Descriptions of MT41K128M16JT-125 AAT:K


    The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.



    Environmental & Export Classifications of MT41K128M16JT-125 AAT:K


    ATTRIBUTEDESCRIPTION
    RoHS StatusROHS3 Compliant
    Moisture Sensitivity Level (MSL)3 (168 Hours)
    REACH StatusREACH Unaffected
    ECCNEAR99
    HTSUS8542.32.0036



    Quality MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns for sale
    Send your message to this supplier
     
    *From:
    *To: SZ ADE Electronics Co., Ltd
    *Subject:
    *Message:
    Characters Remaining: (0/3000)
     
    Inquiry Cart 0